METHOD FOR DETERMINING THE CONCENTRATION OF AN ELE

专利名称：METHOD FOR DETERMINING THE

CONCENTRATION OF AN ELEMENT OF AHETEROEPITAXIAL LAYER

发明人：HOENES, Katja申请号：EP18198983.1申请日：20181005公开号：EP3470827A3公开日：20190501

专利附图：

摘要：In an embodiment, a method for determining the concentration of an elementof a heteroepitaxial layer includes generating a reciprocal space map in Q and Q

directions in a portion of reciprocal space describing positions of diffracted X-ray peaksof a heteroepitaxial layer and of a substrate on which the heteroepitaxial layer ispositioned, determining the position of a diffracted X-ray peak of the substrate in thereciprocal space map in the Q direction, determining the expected position of thediffracted X-ray peak of the heteroepitaxial layer in the Q direction based on thedetermined position of the diffracted X-ray peak of the substrate in the Q direction,generating a scan of the heteroepitaxial layer in a Q direction at the expected position inthe direction, and determining the concentration of a constituent element of theheteroepitaxial layer based on the scan.

申请人：Infineon Technologies Austria AG

地址：Siemensstrasse 2 9500 Villach AT

国籍：AT

代理机构：Moore, Joanne Camilla

更多信息请下载全文后查看