Vertical power semiconductor device and method of

专利名称：Vertical power semiconductor device and

method of making the same

发明人：Baliga, Bantval Jayant申请号：EP11166099.9申请日：20020405公开号：EP2362422A3公开日：20120104

专利附图：

摘要：A power MOSFET (400) includes a semiconductor substrate (402) having a driftregion (404) therein and a transition region (424) that extends between the drift regionand a first surface (402a) of the semiconductor substrate. The transition region has a

vertically retrograded doping profile therein that peaks at a first depth relative to thefirst surface. First and second base shielding regions (412) extending laterally towardseach other to constrict a neck of the upper portion of the transition region are moreoverprovided under respective first and second base regions (414) to deplete the transitionregion.

申请人：Silicon Semiconductor Corporation

地址：633 Davis Drive Suite 500 Durham, NC 27713 US

国籍：US

代理机构：Benson, Christopher

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