专利名称:Vertical power semiconductor device and
method of making the same
发明人:Baliga, Bantval Jayant申请号:EP11166099.9申请日:20020405公开号:EP2362422A3公开日:20120104
专利附图:
摘要:A power MOSFET (400) includes a semiconductor substrate (402) having a driftregion (404) therein and a transition region (424) that extends between the drift regionand a first surface (402a) of the semiconductor substrate. The transition region has a
vertically retrograded doping profile therein that peaks at a first depth relative to thefirst surface. First and second base shielding regions (412) extending laterally towardseach other to constrict a neck of the upper portion of the transition region are moreoverprovided under respective first and second base regions (414) to deplete the transitionregion.
申请人:Silicon Semiconductor Corporation
地址:633 Davis Drive Suite 500 Durham, NC 27713 US
国籍:US
代理机构:Benson, Christopher
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