专利名称：Implant forming method
发明人：Keita Abe,Masanori Nakasu,Ichiro Ono申请号：US10212151申请日：20020806
公开号：US20030030170A1公开日：20030213
专利附图：
摘要：A method for forming an implant having a desired shape includes the steps of(a) forming a layer of ingredient powder having a predetermined thickness composed ofan ingredient powder, and (b) applying an reactant liquid to the layer in accordance withthe desired shape of the implant, portions of the ingredient powder reacting with the
reactant liquid being hardened. The above steps are repeated to stack a plurality of thelayers having hardened portions, respectively, to form a three-dimensional implantformed by a stack of the hardened portions of the layers of the ingredient powder. Theingredient powder is a powder including at least one of a-tricalcium phosphate andtetracalcium phosphate, and a Ca/P ratio of the powder is within a range of 1.40 through2.0.
申请人：ASAHI KOGAKU KOGYO KABUSHIKI KAISHA
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