A method of growing silicate glass layers employin

专利名称：A method of growing silicate glass layers

employing a chemical vapour depositionprocess

发明人：Shioya, Yoshimi,Takagi, Mikio申请号：EP80304550.9申请日：19801217公开号：EP0031671A2公开日：19810708

专利附图：

摘要：Impurity concentration doped in PSG deposited on a plurality of semiconductorsubstrates 2 employing a chemical vapour deposition process depends on the flow rate

of reactive gases in the neighborhood 1a of the first one of the semiconductor substrates2 processed with the same equipment in one batch at the same time. Regulation of theflow rate of the reactive gases in the neighborhood of the first one of the semiconductorsubstrates processed with the same equipment in one batch at the same time is effectiveto make the impurity concentration doped in PSG uniform for all the semiconductorsubstrates processed in one batch employing the presently available sealed tube typeequipment for vacuum vapour deposition process. The flow rate regulation is possible bymonitoring readings of a manometer 8 which is arranged around the inlets 4, 5 of thetube and which was calibrated employing the flow rate of a nonreactive gas such asnitrogen gas.

申请人：FUJITSU LIMITED

地址：1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 JP

国籍：JP

代理机构：Sunderland, James Harry

更多信息请下载全文后查看