Structure for making a top-side contact to a subst

专利名称：Structure for making a top-side contact to a

substrate

发明人：Chun-Tai Wu,Ihsiu Ho申请号：US12359670申请日：20090126公开号：US079884B2公开日：20110802

专利附图：

摘要：A semiconductor structure includes a starting semiconductor substrate having arecessed portion. A semiconductor material is formed in the recessed portion, and has ahigher resistivity than the starting semiconductor substrate. A body region extends in the

semiconductor material, and has a conductivity type opposite that of the semiconductormaterial. Source regions extend in the body region, and have a conductivity type oppositethat of the body region. A gate electrode extends adjacent to but is insulated from thebody region. A first interconnect layer extends over and is in contact with a non-recessedportion of the starting semiconductor substrate. The first interconnect layer and thenon-recessed portion provide a top-side electrical contact to portions of the startingsemiconductor substrate underlying the semiconductor material.

申请人：Chun-Tai Wu,Ihsiu Ho

地址：West Jordan UT US,Salt Lake City UT US

国籍：US,US

代理机构：Kilpatrick Townsend & Stockton LLP

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