专利名称：Nitriding method of gate oxide film发明人：Seiji Matsuyama,Takuya Sugawara,Shigenori
Ozaki,Toshio Nakanishi,Masaru Sasaki
申请号：US11616217申请日：20061226公开号：US07429539B2公开日：20080930
专利附图：
摘要：A substrate processing method comprises the step of forming an oxide film ona silicon substrate surface, and introducing nitrogen atoms into the oxide film byexposing the oxide film to nitrogen radicals excited in plasma formed by a microwave
introduced via a planar antenna.
申请人：Seiji Matsuyama,Takuya Sugawara,Shigenori Ozaki,Toshio Nakanishi,MasaruSasaki
地址：Kyoto JP,Nirasaki JP,Amagasaki JP,Amagasaki JP,Amagasaki JP
国籍：JP,JP,JP,JP,JP
代理机构：Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
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