专利名称:Method for producing molds发明人:Akihiko Ohtsu,Akiko Hattori,Katsuhiro
Nishimaki
申请号:US14040914申请日:20130930公开号:US09308676B2公开日:20160412
专利附图:
摘要:In production of a mold having a deposited film on the surface thereof as amold release layer, a quartz substrate plasma etched employing an etching gas thatincludes a sedimentary gas to form a pattern of protrusions and recesses having a
desired shape in a structure constituted by the quartz substrate and a mask layer, while adeposited film constituted by sediment of the sedimentary gas is formed along thepattern of protrusions and recesses. The deposited film becomes the mold release layer.Thereby, throughput of mold production is improved in the production of molds havingdeposited films as mold release layers on the surfaces thereof.
申请人:FUJIFILM Corporation
地址:Minato-Ku, Tokyo JP
国籍:JP
代理机构:Sughrue Mion, PLLC
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